Publications

15 results at IEDM 2014

High-performance CMOS-compatible self-aligned In_0.53Ga_0.47As MOSFETs with GMSAT over 2200 μs/μm at V_DD = 0.5 v
- - Yanning Sun
  - Amlan Majumdar
  - et al.
- 2014
- IEDM 2014
Thin-film heterojunction field-effect transistors for ultimate voltage scaling and low-temperature large-area fabrication of active-matrix backplanes
- - Bahman Hekmatshoar
  - Ali Afzali-Ardakani
- 2014
- IEDM 2014
Phase Change Memory and its intended applications
- - Chung Lam
- 2014
- IEDM 2014
Electrical characterization of FinFETs with fins formed by directed self assembly at 29 nm fin pitch using a self-aligned fin customization scheme
- - Hsinyu Tsai
  - Hiroyuki Miyazoe
  - et al.
- 2014
- IEDM 2014
Reliability challenges for the 10nm node and beyond
- - James Stathis
  - Miaomiao Wang
  - et al.
- 2014
- IEDM 2014
A novel inspection and annealing procedure to rejuvenate phase change memory from cycling-induced degradations for storage class memory applications
- - Win-San Khwa
  - Jau-Yi Wu
  - et al.
- 2014
- IEDM 2014
First demonstration of high-Ge-content strained-Si_1-xGe_x (x=0.5) on insulator PMOS FinFETs with high hole mobility and aggressively scaled fin dimensions and gate lengths for high-performance applications
- - Pouya Hashemi
  - Karthik Balakrishnan
  - et al.
- 2014
- IEDM 2014
High performance 14nm SOI FinFET CMOS technology with 0.0174μm² embedded DRAM and 15 levels of Cu metallization
- - C.-H.C-H. Lin
  - Brian Greene
  - et al.
- 2014
- IEDM 2014
0.026μm² high performance Embedded DRAM in 22nm technology for server and SOC applications
- - C. Pei
  - G. Wang
  - et al.
- 2014
- IEDM 2014
Experimental demonstration and tolerancing of a large-scale neural network (165,000 synapses), using phase-change memory as the synaptic weight element
- - Geoffrey W. Burr
  - Robert M. Shelby
  - et al.
- 2014
- IEDM 2014