Capacity optimization of emerging memory systems: A shannon-inspired approach to device characterization

Abstract

Traditional approaches to memory characterize the number of distinct states achievable at a given Raw Bit Error Rate (RBER). Using Phase Change Memory (PCM) as an example analog-valued memory, we demonstrate that measuring the mutual information allows optimal design of read-write circuits to increase data storage capacity by 30%. Further, we show the framework can be used for energy efficient memory design by optimizing simulations of a 1Mb memory array to consume 32% less energy/bit. This work provides an information-theoretic framework to guide the design and characterization of other analog-valued emerging memory such as RRAM and CBRAM.