The Viability of HFO-1234ze(E) (trans-1,3,3,3-Tetrafluoropropene) as a Low Global Warming Potential Silicon Dioxide Etch GasAaron WindsorJeremy Clarket al.2025JVSTB
New approach of local critical dimension uniformity improvement for via/contact hole etch with direct current superpositionEmilia W. HirschDominik Metzleret al.2024JVSTB
Mid-IR and UV-Vis-NIR Mueller matrix ellipsometry characterization of tunable hyperbolic metamaterials based on self-assembled carbon nanotubesStefan SchöchePo Hsun Hoet al.2020JVSTB
Nitride etching with hydrofluorocarbons. II. Evaluation of C4H9F for tight pitch Si3N4 patterning applicationsNathan MarchackHiroyuki Miyazoeet al.2018JVSTB
Nitride etching with hydrofluorocarbons III: Comparison of C4H9F and CH3F for low-k′ nitride spacer etch processesHiroyuki MiyazoeNathan Marchacket al.2018JVSTB
Nitride etching with hydrofluorocarbons. I. Selective etching of nitride over silicon and oxide materials by gas discharge optimization and selective deposition of fluorocarbon polymerSebastian U. EngelmannRobert L. Bruceet al.2017JVSTB
Study of phosphorus doped Si:C films formed by in situ doped Si epitaxy and implantation process for n-type metal-oxide-semiconductor devicesShogo MochizukiRainer Loesinget al.2017JVSTB
Advanced single precursor based pSiCOH k = 2.4 for ULSI interconnectsDeepika PriyadarshiniSon Van Nguyenet al.2017JVSTB