Guy Cohen

I am a senior research staff member at the Artificial Intelligence (AI) materials and devices research group of the IBM T. J. Watson Research Center in Yorktown Heights, NY. My mission is to advance materials and device technology for the acceleration of AI platforms. I also study of topological conductors that exhibit superior dimensional scaling and could substitute conventional metals (e.g., Cu or Ru) for future interconnects.

I received a B.Sc. degree in electrical engineering from Technion – Israel Institute of Technology, Israel in 1988, a M.Sc. degree in physical electronics from Tel-Aviv University in 1993, and a Ph.D. in electrical engineering from Technion – Israel Institute of Technology, in 1998. My dissertation advisor was Prof. Dan Ritter. 

In 1996 I was a visiting scholar with Centre national d'études des télécommunications (CNET), France-Telecom labs, Bangneux, France, where I studied the amphoteric carbon doping of InGaAsP layers matched to InP. 

Since 1998 I have been with the IBM T.J. Watson Research Center in Yorktown Heights, NY where I had worked on topics such as self-aligned double-gate MOSFETs, silicide for thin silicon-on-insulator (SOI), compliant substrates, strained-silicon-on-silicon and mixed orientation substrates. Together with my IBM team we pioneered the study of gate-all-around silicon nanowires MOSFET technology. The nanowires MOSFET evolved into the nanosheets MOSFET, which is currently in product development. My research has also expanded to the study of phase change materials for non-volatile memory. Together with Samsung researchers my team advanced contacts technology for III-V semiconductor devices on silicon substrates. My current research focus is to study devices that can be used for implementing in-memory computation and the acceleration of AI hardware.