1 µm MOSFET VLSI Technology: Part 1-An Overview

This paper attempts to provide a technical perspective for a 1 $um MOSFET VLSI technology described in the technical papers that follow. Highlights of various aspects of the technology development are discussed briefly. These include device design, circuit design, hot-electron effects, processing technology, electron-beam lithography metal suicide interconnections and radiation effects. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.