A fully-functional 90nm 8Mb STT MRAM demonstrator featuring trimmed, reference cell-based sensing

J. DeBrosse; T. Maffitt; Y. Nakamura; Guenole Jan; Po-Kang Wang

doi:10.1109/CICC.2015.7338359

CICC 2015

Conference paper

25 Nov 2015

A fully-functional 90nm 8Mb STT MRAM demonstrator featuring trimmed, reference cell-based sensing

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Abstract

Spin Transfer Torque Magnetoresistive RAM (STT MRAM) has uniquely attractive write performance and endurance characteristics. Nonetheless, little STT MRAM circuit hardware data has been published [1-4]. This paper describes a fully-functional 90nm 8Mb STT MRAM, identifies and describes solutions to the primary circuit challenges, and includes considerable circuit hardware data.

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