A statistical study of magnetic tunnel junctions for high-density spin torque transfer-MRAM (STT-MRAM)
- R. Beach
- T. Min
- et al.
- 2008
- IEDM 2008
Publications
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.
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12 results for Po-Kang Wang
IC process compatible nonvolatile magnetic RAM
- D.D. Tang
- P.-K. Wang
- et al.
- 1995
- IEDM 1995
Raman magnetic resonance
- C.S. Yannoni
- R.D. Kendrick
- et al.
- 1987
- Physical Review Letters
A fully-functional 90nm 8Mb STT MRAM demonstrator featuring trimmed, reference cell-based sensing
- J. DeBrosse
- T. Maffitt
- et al.
- 2015
- CICC 2015
Feasibility of an active-read approach for spin-torque switched magnetic tunnel junctions in a random access memory
- Jonathan Z. Sun
- John Debrosse
- et al.
- 2013
- Journal of Applied Physics
A study of write margin of spin torque transfer magnetic random access memory technology
- Tai Min
- Qiang Chen
- et al.
- 2010
- IEEE Transactions on Magnetics
Back-hopping after spin torque transfer induced magnetization switching in magnetic tunneling junction cells
- T. Min
- J.Z. Sun
- et al.
- 2009
- Journal of Applied Physics
Similarities and differences in the C-C bond scission of ethylene and acetylene on supported Ir and Pt clusters
- Po-Kang Wang
- Charles P. Slichter
- et al.
- 2002
- Journal of Physical Chemistry
Spin-Valve RAM Cell
- D.D. Tang
- P.-K. Wang
- et al.
- 1995
- IEEE Transactions on Magnetics
Sensitivity of Orthogonal Magnetoresistive Heads
- Po-Kang Wang
- Mohamad Krounbi
- et al.
- 1993
- IEEE Transactions on Magnetics