Frank Stern, Steven E. Laux
Applied Physics Letters
A method for incorporating impact ionization into a general coutrol-volume formulation of semiconductor transport is de-scribed. The methods for electric-field and current-density vector evaluation and generated charge partitioning within a two-dimensional triangular element are given. The techniques employed allow device breakdown to be accurately determined independent of mesh orientation to current flow direction. The avalanche breakdown of a 1-µm n-MOSFET illustrates the approach. Regions where the drain current is a multivalued function of drain voltage are directly and self-consis-tently calculated for this device. Copyright © 1985 by The Institute of Electrical and Electronics Engineers, Inc.
Frank Stern, Steven E. Laux
Applied Physics Letters
Frank Stern, Steven E. Laux
Journal of Applied Physics
Arvind Kumar, Steven E. Laux, et al.
Applied Physics Letters
Steven E. Laux, Wai Lee
IEEE Electron Device Letters