A new method for determining electron beam proximity correction parameters in a double layer siloxane-diazo resist system

Double layer resist systems have recently become very popular in electron beam lithography because of the ease of defining a high quality, high density very large scale integrated circuit (VLSI) pattern in the thin top layer of resist. However, in order to delineate high density VLSI patterns of high quality using electron beams, the electron scattering processes or proximity effects must be accurately characterized and appropriate steps taken to compensate for them. In this paper, theoretical considerations are combined with experimental observations in order to show how proximity correction parameters can be measured in a double layer system where the top layer is a thin (1200 Å) electron beam sensitive, negative resist.