PaperEfficient visible electroluminescence at 300°K from Ga 1-xAlxAs p-n junctions grown by liquid-phase epitaxyH. Rupprecht, J. Woodall, et al.Applied Physics Letters
PaperProximate capless annealing of GaAs using a controlled-excess As vapor pressure sourceJ. Woodall, H. Rupprecht, et al.Applied Physics Letters
PaperThe Effect of Deep Levels due to Copper on the Optical and Electrical Properties of GaAs p-n JunctionsM.H. Pilkuhn, H. RupprechtIEEE T-ED
PaperEffect of deep levels on the optical and electrical properties of copper-doped GaAs p-n junctionsT.N. Morgan, M.H. Pilkuhn, et al.Physical Review
