E. Burstein
Ferroelectrics
Selective protection of the porosity can be implemented in porous materials processing by using an organic polymer fill. This strategy is employed to protect ultralow-k (ULK) materials during patterning of 250-nm lines and spaces. Structures with significantly less sidewall and trench bottom damage are obtained, proving the potential of this novel approach in materials science. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
E. Burstein
Ferroelectrics
Peter J. Price
Surface Science
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
I. Morgenstern, K.A. Müller, et al.
Physica B: Physics of Condensed Matter