William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
Selective protection of the porosity can be implemented in porous materials processing by using an organic polymer fill. This strategy is employed to protect ultralow-k (ULK) materials during patterning of 250-nm lines and spaces. Structures with significantly less sidewall and trench bottom damage are obtained, proving the potential of this novel approach in materials science. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
Q.R. Huang, Ho-Cheol Kim, et al.
Macromolecules