A. Krol, C.J. Sher, et al.
Surface Science
We present the results of backside non-invasive optical testing of CMOS Flip-Chips. The exploited principle is the hot-carrier luminescence emitted by MOS transistors in saturation. The set-up is based on a solid-state single-photon avalanche diode with a time resolution better than 30ps. We discuss the methodology for backside investigation, the criteria for selecting the appropriate detector, and the sample thinning. Characterization of a ring oscillator and the debug of a failing circuit are developed. We show how optical investigation and SPICE simulations of the luminescence are valuable tools for defects identification in circuits. © 2003 Elsevier Ltd. All rights reserved.
A. Krol, C.J. Sher, et al.
Surface Science
J.H. Stathis, R. Bolam, et al.
INFOS 2005
Kenneth R. Carter, Robert D. Miller, et al.
Macromolecules
William G. Van der Sluys, Alfred P. Sattelberger, et al.
Polyhedron