E. Burstein
Ferroelectrics
Recent advances of a highly scalable bridge phase change memory cell are presented. To fabricate and characterize highly scaled devices, designs in both the process procedure and the testing algorism are considered extensively. We also compare the characteristics of the devices made from different types of materials. The experimental data reveal the superior scaling properties of the bridge phase change memory in different materials. © 2008 IEEE.
E. Burstein
Ferroelectrics
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ICSICT 2008
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