A 60GHz class-E power amplifier in SiGe
Alberto Valdes-Garcia, Scott Reynolds, et al.
A-SSCC 2006
In this paper, the performance of flip-chip interconnects at frequencies up to 40 GHz is presented based on a nondestructive in situ measurement approach. The method unfolds the raw flip-chip interconnect excluding any launch structures in concomitance of a mounted silicon chip. The results are compared with a commonly used two-port through measurement technique of coplanar wave (CPW)-to-CPW transitions without involvement of a silicon chip. Finally, the attempt has been made to extract the electrical performance from a directly probed flip-chip interconnect for the first time. © 2005 IEEE.
Alberto Valdes-Garcia, Scott Reynolds, et al.
A-SSCC 2006
Thomas Zwick, Arun Chandrasekhar, et al.
IEEE T-MTT
Ullrich R. Pfeiffer
ESSCIRC 2006
Ullrich Pfeiffer, Arun Chandrasekhar
IEEE Topical Meeting EPEPS 2003