L. Krusin-Elbaum, T. Shibauchi, et al.
Journal of Magnetism and Magnetic Materials
We have investigated reactively sputtered films of RuO2 for possible application in very large scale integrated circuits. Sputtering yields stoichiometric ruthenium dioxide in a large window of oxygen pressures and the films are reasonably low stressed in the 10-9 dyn cm -2 range. The resistivity of as deposited films is 40 μΩ cm. The films are excellent barriers against interdiffusion of Si and Al.
L. Krusin-Elbaum, T. Shibauchi, et al.
Journal of Magnetism and Magnetic Materials
C. Richard Guarnieri, K.V. Ramanathan, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
L. Krusin-Elbaum, M.O. Aboelfotoh, et al.
Thin Solid Films
L. Krusin-Elbaum, L. Civale, et al.
Physica A: Statistical Mechanics and its Applications