K. Chatty, P.E. Cottrell, et al.
IRPS 2004
Hot-carriers in MOSFETs are responsible for time-dependent near-infrared emission, synchronous with the switching transitions in CMOS circuits. Fast electrical waveforms propagating through integrated circuits can be effectively measured by means of high sensitivity solid-state photo detectors with sharp time-resolution. Thanks to a time jitter of less than 30ps. We obtained an equivalent analog bandwidth of about 30GHz. We simulate the luminescence waveforms. In-depth insight of circuit behavior is reported by comparing measured and simulated luminescence waveforms, leading to a powerful identification of design errors and failures.
K. Chatty, P.E. Cottrell, et al.
IRPS 2004
S. Cova, C. Porta, et al.
ESSDERC 2000
N. Zamdmer, J.O. Plouchart, et al.
ESSDERC 2002
A. Tosi, F. Stellari, et al.
Microelectronics Reliability