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ESD robustness of 4 kV HBM is achieved in CMOS-on-SOI ESD protection networks in an advanced sub-0.25 μm mainstream CMOS-on-SOI technology. Design layout, body contact, floating-gate effects and novel ESD protection implementations are discussed. © 1998 Elsevier Science B.V.
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
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Surface Review and Letters
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Journal of Polymer Science Part A: Polymer Chemistry