The DX centre
T.N. Morgan
Semiconductor Science and Technology
The precise control of the exposure step provided by interferometric photolithography facilitayes studies of chemically amplified resist physics, chemistry, and functional properties that are difficult using more conventional exposure techniques. We describe here the design and operating characteristics of a deep-ultraviolet interferometric lithography tool designed specifically for the study of high resolution chemically amplified resists. We provide an example of its use to evaluate resists response to controlled variations in aerial image contrast. © 1998 American Vacuum Society.
T.N. Morgan
Semiconductor Science and Technology
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
J.V. Harzer, B. Hillebrands, et al.
Journal of Magnetism and Magnetic Materials
J.R. Thompson, Yang Ren Sun, et al.
Physica A: Statistical Mechanics and its Applications