Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry
The precise control of the exposure step provided by interferometric photolithography facilitayes studies of chemically amplified resist physics, chemistry, and functional properties that are difficult using more conventional exposure techniques. We describe here the design and operating characteristics of a deep-ultraviolet interferometric lithography tool designed specifically for the study of high resolution chemically amplified resists. We provide an example of its use to evaluate resists response to controlled variations in aerial image contrast. © 1998 American Vacuum Society.
Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
A. Krol, C.J. Sher, et al.
Surface Science
Lawrence Suchow, Norman R. Stemple
JES