J.M. Atkin, R.B. Laibowitz, et al.
IRPS 2009
Destructive breakdown in silicon dioxide is shown to be strongly correlated to the oxide degradation caused by hot-electron-induced defect production and charge trapping near the interfaces of the films. Two well-defined transitions in the charge-to-breakdown data as a function of field and oxide thickness are shown to coincide with the onset of trap creation and impact ionization by electrons with energies exceeding 2 and 9 eV, respectively.
J.M. Atkin, R.B. Laibowitz, et al.
IRPS 2009
R. Ludeke, M.T. Cuberes, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
M.J. Uren, V. Nayar, et al.
JES
D.J. Dimaria, E. Cartier, et al.
MRS Proceedings 1992