Sandip Tiwari, Paul M. Solomon, et al.
Microelectronic Engineering
Destructive breakdown in silicon dioxide is shown to be strongly correlated to the oxide degradation caused by hot-electron-induced defect production and charge trapping near the interfaces of the films. Two well-defined transitions in the charge-to-breakdown data as a function of field and oxide thickness are shown to coincide with the onset of trap creation and impact ionization by electrons with energies exceeding 2 and 9 eV, respectively.
Sandip Tiwari, Paul M. Solomon, et al.
Microelectronic Engineering
E. Cartier, Andreas Kerber, et al.
ECS Meeting 2011
D.J. Dimaria, P.C. Arnett
Applied Physics Letters
D.J. Dimaria, E. Cartier
Journal of Applied Physics