V. Narayanan, K. Maitra, et al.
IEEE Electron Device Letters
Destructive breakdown in silicon dioxide is shown to be strongly correlated to the oxide degradation caused by hot-electron-induced defect production and charge trapping near the interfaces of the films. Two well-defined transitions in the charge-to-breakdown data as a function of field and oxide thickness are shown to coincide with the onset of trap creation and impact ionization by electrons with energies exceeding 2 and 9 eV, respectively.
V. Narayanan, K. Maitra, et al.
IEEE Electron Device Letters
E. Cartier
ECS Transactions
V. Narayanan, A.C. Callegari, et al.
VLSI Technology 2004
D. Arnold, E. Cartier, et al.
Physical Review B