U. Wieser, U. Kunze, et al.
Physica E: Low-Dimensional Systems and Nanostructures
This paper focuses on using the resist contrast curve as a method for pre-screening resists for attenuated phase-shift mask contact hole applications. The importance of surface inhibition and high c-value in developing PSM C/H resists is revealed. These concepts are confirmed by lithographic evaluation. A good overall process window (without sidelobe printing) is demonstrated by such high c-value resists.
U. Wieser, U. Kunze, et al.
Physica E: Low-Dimensional Systems and Nanostructures
Daniel J. Coady, Amanda C. Engler, et al.
ACS Macro Letters
S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
J. Tersoff
Applied Surface Science