Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
Experimental and theoretical results are presented on the determination of distortion induced during the process of fabrication of X-ray lithography masks. The studies were performed on B-doped Si and on B-N-H mask substrates. © 1985.
Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
Lawrence Suchow, Norman R. Stemple
JES
A. Krol, C.J. Sher, et al.
Surface Science
P.C. Pattnaik, D.M. Newns
Physical Review B