N. Gong, Malte J. Rasch, et al.
IEDM 2022
The electrical characteristics of a heterojunction tunneling field-effect transistor (HETT), with a p-type Si0.75Ge0.25 source, have been measured as a function of strain. HETTs with channel transport and applied strain both in the [110] direction show a smooth monotonic change in drain current over a range of 0.09% compressive to 0.13% tensile strain. A measure γ = (d/d ln JD)(d ln JD/ds) s = 0 of the effect of strain s on tunneling current JD is proposed, which captures the dependence of the tunneling exponential argument on strain. An experimental value of γ = - 11.7 is extracted for the tensile case and compared to simulation results. We found theoretically that the value and sign of γ depend sensitively on the built-in strain at the SiSiGe interface. © 2011 IEEE.
N. Gong, Malte J. Rasch, et al.
IEDM 2022
Sandip Tiwari, Paul M. Solomon, et al.
Microelectronic Engineering
Steven J. Koester, Isaac Lauer, et al.
ECS Transactions
Michael A. Guillorn, Josephine Chang, et al.
VLSI Technology 2011