Bijan Davari, Wen-Hsing Chang, et al.
IEEE T-ED
Paper
Effects of X-Ray Irradiation on GIDL in MOSFET's
Abstract
The effect of X-ray irradiation on the gate-induced drain leakage (GIDL) is shown to be mostly due to the electrostatic effect of the trapped positive charge in n-channel MOS-FET's. In p-channel MOSFET's, in addition, irradiation increases the interface-state-assisted tunneling component of the GIDL. In both n- and p-channel MOSFET's, a forming gas anneal at 400°C completely removes all effects of irradiation on the GIDL. © 1992 IEEE
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