Leonello Dori, Alexandre Acovic, et al.
IEEE Electron Device Letters
The effect of X-ray irradiation on the gate-induced drain leakage (GIDL) is shown to be mostly due to the electrostatic effect of the trapped positive charge in n-channel MOS-FET's. In p-channel MOSFET's, in addition, irradiation increases the interface-state-assisted tunneling component of the GIDL. In both n- and p-channel MOSFET's, a forming gas anneal at 400°C completely removes all effects of irradiation on the GIDL. © 1992 IEEE
Leonello Dori, Alexandre Acovic, et al.
IEEE Electron Device Letters
Alexandre Acovic, Devendra K. Sadana, et al.
IEEE Electron Device Letters
Bijan Davari, Wen-Hsing Chang, et al.
IEEE T-ED
Luca Selmi, Maura Pavesi, et al.
IEEE Transactions on Electron Devices