Katherine L. Saenger, Christian Lavoie, et al.
MRS Fall Meeting 2010
N-and p-MOSFETs have been fabricated in strained Si-on-SiGe-on-insulator (SSOI) with high (15-25%) Ge content. Wafer bonding and H-induced layer transfer techniques enabled the fabrication of the high Ge content SiGe-on-insulator (SGOI) substrates. Mobility enhancement of 50% for electrons (with 15% Ge) and 15-20% for holes (with 20-25% Ge) has been demonstrated in SSOI MOSFETs. These mobility enhancements are commensurate with those reported for FETs fabricated on strained silicon on bulk SiGe substrates.
Katherine L. Saenger, Christian Lavoie, et al.
MRS Fall Meeting 2010
Steven J. Koester, Jeremy D. Schaub, et al.
IEEE Journal on Selected Topics in Quantum Electronics
Kazuya Ohuchi, Christian Lavoie, et al.
IWJT 2008
Kazuya Ohuchi, Christian Lavoie, et al.
IEDM 2007