J. Tersoff
Applied Surface Science
Electron spin resonance (ESR) experiments on large area metal-nitride-crystalline silicon (MNS) structures show that the occupation of silicon dangling bonds in silicon nitride can be modulated under the application of a gate bias. The technique applied simultaneously with capacitance-voltage (CV) measurements has been used for the identification of specific electronic transitions. In the case of Si-rich silicon nitride, we demonstrate that the ESR line consists of an inhomogeneous distribution of discrete components at different g-values. Trapping of holes observed under negative bias occurs at a site with a g-value of 2.0052, corresponding to a pure Si environment, while electron trapping observed under positive bias occurs at a site with a g-value of 2.0028, corresponding to a pure N environment. The selectivity of the transitions with respect to the bias leads us to attribute different energy levels to each Si dangling bond configuration. © 1989.
J. Tersoff
Applied Surface Science
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
Julien Autebert, Aditya Kashyap, et al.
Langmuir
U. Wieser, U. Kunze, et al.
Physica E: Low-Dimensional Systems and Nanostructures