Energy level of the nitrogen dangling bond in amorphous silicon nitride

W.L. Warren; Jerzy Kanicki; J. Robertson; P. Lenahan

doi:10.1063/1.106222

Applied Physics Letters

Paper

01 Dec 1991

Energy level of the nitrogen dangling bond in amorphous silicon nitride

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Abstract

The composition dependence and room-temperature metastability of the paramagnetic nitrogen dangling-bond center is amorphous silicon nitride suggest that its energy level lies close to the N pπ states, in agreement with theoretical calculations.

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AMORPHOUS HYDROGENATED SILICON SOLAR CELLS WITH THE HOMOGENEOUS CHEMICAL VAPOR DEPOSITION TECHNIQUE.

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Evidence for a negative electron-electron correlation energy in the dominant deep trapping center in silicon nitride films

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METAL-POLYACETYLENE SCHOTTKY BARRIER DIODES.

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Bias-stress-induced stretched-exponential time dependence of charge injection and trapping in amorphous silicon thin-film transistors

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Abstract

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AMORPHOUS HYDROGENATED SILICON SOLAR CELLS WITH THE HOMOGENEOUS CHEMICAL VAPOR DEPOSITION TECHNIQUE.

Evidence for a negative electron-electron correlation energy in the dominant deep trapping center in silicon nitride films

METAL-POLYACETYLENE SCHOTTKY BARRIER DIODES.

Bias-stress-induced stretched-exponential time dependence of charge injection and trapping in amorphous silicon thin-film transistors