M. Eizenberg, D.A. Smith, et al.
Applied Physics Letters
Enhancement of Schottky barrier height of Ti-Pt-Au on n-type GaAs was obtained by heavily (2×1018 cm-3) counter doping the near-surface region of the substrate. The p-type region was produced by recoil implantation of Mg from a Mg thin film (300 Å) irradiated by a 60 keV As+ beam. The film was subsequently chemically etched. The recoil-implanted samples showed an enhancement of 140 meV in the Schottky barrier height following rapid thermal annealing in an AsH3 furnace at 850°C for nominal zero second.
M. Eizenberg, D.A. Smith, et al.
Applied Physics Letters
E. Gusev, C. Cabral Jr., et al.
IEDM 2004
A. Paccagnella, A.C. Callegari, et al.
IEEE T-ED
S.W. Bedell, A. Reznicek, et al.
IEEE International SOI Conference 2005