A. Paccagnella, A.C. Callegari
Solid State Electronics
Enhancement of Schottky barrier height of Ti-Pt-Au on n-type GaAs was obtained by heavily (2×1018 cm-3) counter doping the near-surface region of the substrate. The p-type region was produced by recoil implantation of Mg from a Mg thin film (300 Å) irradiated by a 60 keV As+ beam. The film was subsequently chemically etched. The recoil-implanted samples showed an enhancement of 140 meV in the Schottky barrier height following rapid thermal annealing in an AsH3 furnace at 850°C for nominal zero second.
A. Paccagnella, A.C. Callegari
Solid State Electronics
D.A. Buchanan, E. Gusev, et al.
IEDM 2000
A.C. Callegari, P. Jamison, et al.
IEDM 2004
E. Leobandung, E. Barth, et al.
IEDM 1999