Hussein I. Hanafi, Robert H. Dennard, et al.
IEEE Journal of Solid-State Circuits
The early conceptual stages and key elements in the development of the one-device MOSFET dynamic RAM are reviewed from the personal perspective of the author. Future miniaturization to the level of 1/4μm channel length and minimum lithography dimension is projected. © 1984 IEEE
Hussein I. Hanafi, Robert H. Dennard, et al.
IEEE Journal of Solid-State Circuits
Rick L. Mohler, Christopher W. Long, et al.
IEEE Journal of Solid-State Circuits
Tak H. Ning, Peter W. Cook, et al.
IEEE T-ED
Robert H. Dennard, Fritz H. Gaensslen, et al.
IEEE JSSC