PaperCMOS Scaling for High Performance and Low Power—The Next Ten YearsBijan Davari, Robert H. Dennard, et al.Proceedings of the IEEE
Paper1 μm MOSFET VLSI Technology: Part IV—Hot-Electron Design ConstraintsTak H. Ning, Peter W. Cook, et al.IEEE T-ED
Paper1-GHz fully pipelined 3.7-ns address access time 8 k × 1024 embedded synchronous DRAM macroOsamu Takahashi, Sang H. Dhong, et al.IEEE Journal of Solid-State Circuits
Conference paperA fully-integrated switched-capacitor 2:1 Voltage converter with regulation capability and 90% efficiency at 2.3A/mm2Leland Chang, Robert K. Montoye, et al.VLSI Circuits 2010