George A. Sai-Halasz, Matthew R. Wordeman, et al.
IEEE Electron Device Letters
The early conceptual stages and key elements in the development of the one-device MOSFET dynamic RAM are reviewed from the personal perspective of the author. Future miniaturization to the level of 1/4μm channel length and minimum lithography dimension is projected. © 1984 IEEE
George A. Sai-Halasz, Matthew R. Wordeman, et al.
IEEE Electron Device Letters
Yuan Taur, Genda J. Hu, et al.
IEEE T-ED
Tak H. Ning, Peter W. Cook, et al.
IEEE T-ED
Hu H. Chao, Robert H. Dennard, et al.
IEEE Journal of Solid-State Circuits