D.V. Podlesnik, M.T. Schmidt, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Paper
GaAs-oxide removal using an electron cyclotron resonance hydrogen plasma
Abstract
The surface chemistry of GaAs-oxide removal with an electron cyclotron resonance (ECR) hydrogen plasma has been investigated with x-ray photoelectron spectroscopy. It is found that As oxide is efficiently removed at room temperature, and heating expedites the removal of Ga oxide. Band bending changes during ECR hydrogen-plasma oxide reduction are also discussed.