M.H. Pilkuhn, H. Rupprecht
Proceedings of the IEEE
Spontaneous and stimulated emission from junctions in diodes made of silicon-doped, melt-grown GaAsxP1-x alloys have been studied. Variations of the emission spectra as a function of current and of composition ranging up to 40 mole % GaP were examined both at room temperature and 77°K. © 1964 The American Institute of Physics.
M.H. Pilkuhn, H. Rupprecht
Proceedings of the IEEE
M.R. Lorenz, M.H. Pilkuhn
Journal of Applied Physics
M.H. Pilkuhn, H. Rupprecht
Journal of Applied Physics
M.H. Pilkuhn, H. Rupprecht
Proceedings of the IEEE