Paper
The DX centre
T.N. Morgan
Semiconductor Science and Technology
A simple u.v. curing process is described that renders micron sized images in AZ resists resistant to flow when heated to temperatures as high as 210° C. The u.v. treatment prevents the image flow problems usually encountered in reactive ion etching processes. © 1981, The Electrochemical Society, Inc. All rights reserved.
T.N. Morgan
Semiconductor Science and Technology
M. Hargrove, S.W. Crowder, et al.
IEDM 1998
Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
Gregory Czap, Kyungju Noh, et al.
APS Global Physics Summit 2025