Short-gate-length epitaxial-channel self-aligned GaAs MESFETs with very large k-factor
- T.N. Jackson
- G. Pepper
- et al.
- 1990
- IEDM 1990
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6 results for J.F. DeGELORMO
Gate-Self-Aligned P-Channel Germanium Misfet's
- Thomas N. Jackson
- C.M. Ransom
- et al.
- 1991
- IEEE Electron Device Letters
A New Low-Voltage Si-Compatible Electroluminescent Device
- D.J. Robbins
- C. Falcony
- et al.
- 1982
- IEEE Electron Device Letters
Microstructure and electrical characteristics of tungsten and WSix contacts to GaAs
- D.P. Basile
- C.L. Bauer
- et al.
- 1991
- Materials Science and Engineering B
IIIB-5 High-Transconductance InGaAs/InAlAs SISFET'S
- T.N. Jackson
- P. Solomon
- et al.
- 1991
- IEEE T-ED
IIB-4 Gate-Self-Aligned n-channel and p-channel Germanium MOSFET'S
- C.M. Ransom
- T.N. Jackson
- et al.
- 1991
- IEEE T-ED