Conference paperFabrication of CMOS on ultrathin SOI obtained by epitaxial lateral overgrowth and chemical-mechanical polishingG. Shahidi, B. Davari, et al.IEDM 1990
Conference paperA self-aligned inverse-T gate fully overlapped LDD device for sub-half micron CMOSD.S. Wen, C.C.-H. Hsu, et al.IEDM 1989
PaperCMOS scaling in the 0.1-μm, 1.X-volt regime for high-performance applicationsG. Shahidi, J. Warnock, et al.IBM J. Res. Dev