S. Kim, S.V. Kosonocky, et al.
ISLPED 2003
Advanced CMOS technology can enable high levels of performance with reduced active power at the expense of increased standby leakage. MTCMOS has previously been described as a method of reducing leakage in standby modes, by addition of a power supply interrupt switch. Enhancements using variable well bias and layout techniques are described and demonstrate increased performance and reduced leakage over conventional MTCMOS circuits.