Sub-25nm FinFET with advanced fin formation and short channel effect engineering
- Tenko Yamashita
- Veeraraghvan S. Basker
- et al.
- 2011
- VLSI Technology 2011
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15 results for Kam-Leung Lee
Impact of diffusionless anneal using dynamic surface anneal on the electrical properties of a high-k/metal gate stack in metal-oxide-semiconductor devices
- Changhwan Choi
- Kam-Leung Lee
- et al.
- 2011
- Applied Physics Letters
Effective schottky barrier lowering for contact resistivity reduction using silicides as diffusion sources
- Zhen Zhang
- F. Pagette
- et al.
- 2010
- VLSI-TSA 2010
Sub-20 nm abrupt USJ formation with long ms-flash with sub-2 nm dopant motion control
- Kam-Leung Lee
- Isaac Lauer
- et al.
- 2010
- IWJT 2010
Sharp reduction of contact resistivities by effective schottky barrier lowering with silicides as diffusion sources
- Zhen Zhang
- F. Pagette
- et al.
- 2010
- IEEE Electron Device Letters
High-κ/metal-gate fully depleted SOI CMOS with single-silicide schottky source/drain with sub-30-nm gate length
- Marwan H. Khater
- Zhen Zhang
- et al.
- 2010
- IEEE Electron Device Letters
Self-Aligned n-Channel Germanium MOSFETs With a Thin Ge Oxynitride Gate Dielectric and Tungsten Gate
- Hulling Shang
- Kam-Leung Lee
- et al.
- 2004
- IEEE Electron Device Letters
20 nm N + abrupt junction formation in Strained Si/Si 1-xGe x MOS device
- K.L. Lee
- F. Cardone
- et al.
- 2003
- IEDM 2003
Sub-30 nm P+ abrupt junction formation in strained Si/Si1-xGex MOS device
- K.L. Lee
- J.O. Chu
- et al.
- 2002
- IEDM 2002
Metal-gate FinFET and fully-depleted SOI devices using total gate silicidation
- Jakub Kedzierski
- Edward Nowak
- et al.
- 2002
- IEDM 2002