U. Gösele, F.F. Morehead
Journal of Applied Physics
Diffused p - n junctions in CdTe have been shown to emit efficient electroluminescence under forward bias at 77°K. Capacitance measurements, current - voltage characteristics, photovoltaic measurements, and the shift of the emitted photon energies with current and temperature are consistent with a space-charge recombination controlled current. The dependence of the quantum efficiency on temperature and current is consistent with a simple, Schön - Klasens-type model of thermal quenching and with limitations imposed by the second law of thermodynamics. The low average concentration of majority carriers at the junction (∼1016 cm-3) that characterizes these devices is a major limitation in obtaining high efficiencies of electroluminescence at 300°K, even at high current densities. © 1966 The American Institute of Physics.
U. Gösele, F.F. Morehead
Journal of Applied Physics
R.T. Hodgson, V.R. Deline, et al.
MRS Proceedings 1983
F.F. Morehead, B.L. Crowder
Radiation Effects
U. Gösele, F.F. Morehead, et al.
Applied Physics Letters