J.M. Neri, D.A. Hammer, et al.
IEEE TNS
Paper
Ion beam annealing of semiconductors
Abstract
The first use of an intense pulsed ion beam to anneal ion-implanted semiconductors is reported. Helium ion channeling shows that a single 80-ns pulse 200-keV H+ ions at ∼100 A/cm2 produced good crystallinity in silicon implanted with 1014 As/cm2 at 100 keV.
Related
Olav Hellwig, Dieter Weller, et al.
Applied Physics Letters
A.J. Kellock, J.E.E. Baglin, et al.
MRS Spring Meeting 1994
Conference paper
Thermal degradation of tantalum-nickel thin film couples
M.H. Tabacniks, A.J. Kellock, et al.
MRS Spring Meeting 1995