Marshall I. Nathan, R.T. Hodgson, et al.
Applied Physics Letters
Paper
Ion beam annealing of semiconductors
Abstract
The first use of an intense pulsed ion beam to anneal ion-implanted semiconductors is reported. Helium ion channeling shows that a single 80-ns pulse 200-keV H+ ions at ∼100 A/cm2 produced good crystallinity in silicon implanted with 1014 As/cm2 at 100 keV.
Related
T. Thomson, B.D. Terris, et al.
Journal of Applied Physics
S. Maat, A.J. Kellock, et al.
Journal of Magnetism and Magnetic Materials
J.E.E. Baglin, C.T. Rettner, et al.
SPIE Optical Science and Technology 2001