J.E.E. Baglin
Nuclear Inst. and Methods in Physics Research, B
Paper
Ion beam annealing of semiconductors
Abstract
The first use of an intense pulsed ion beam to anneal ion-implanted semiconductors is reported. Helium ion channeling shows that a single 80-ns pulse 200-keV H+ ions at ∼100 A/cm2 produced good crystallinity in silicon implanted with 1014 As/cm2 at 100 keV.
Related
Conference paper
Thermal degradation of tantalum-nickel thin film couples
M.H. Tabacniks, A.J. Kellock, et al.
MRS Spring Meeting 1995
J.E.E. Baglin, R.T. Hodgson, et al.
Applied Physics Letters
R.T. Hodgson, P.P. Sorokin, et al.
IEEE JQE