J.E.E. Baglin, E.J. Bentz, et al.
Physical Review C
The first use of an intense pulsed ion beam to anneal ion-implanted semiconductors is reported. Helium ion channeling shows that a single 80-ns pulse 200-keV H+ ions at ∼100 A/cm2 produced good crystallinity in silicon implanted with 1014 As/cm2 at 100 keV.
J.E.E. Baglin, E.J. Bentz, et al.
Physical Review C
Stephen C. Wallace, R.T. Hodgson, et al.
Applied Physics Letters
W.K. Chu, S. Mader, et al.
Nuclear Instruments and Methods
J.E.E. Baglin
Applied Surface Science