PaperDoping concentration dependence of radiance and optical modulation bandwidth in carbon-doped Ga0.51In0.49P/GaAs light-emitting diodes grown by gas source molecular beam epitaxyT.J. De Lyon, J. Woodall, et al.Applied Physics Letters
PaperPhotoemission spectroscopy of GaAs:As photodiodesD.T. McInturff, J. Woodall, et al.Applied Physics Letters
PaperSubpicosecond, freely propagating electromagnetic pulse generation and detection using GaAs:As epilayersAlan C. Warren, N. Katzenellenbogen, et al.Applied Physics Letters
PaperSi diffusion and segregation in low-temperature grown GaAsK.L. Kavanagh, J.C.P. Chang, et al.Applied Physics Letters
