PaperCarbon doping of GaP, GalnP, and AlinP in metalorganic molecular beam epitaxy using methyl and ethyl precursorsT.J. De Lyon, J. Woodall, et al.Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
PaperRole of excess as in low-temperature-grown GaAsAlan C. Warren, J. Woodall, et al.Physical Review B
PaperSubpicosecond, freely propagating electromagnetic pulse generation and detection using GaAs:As epilayersAlan C. Warren, N. Katzenellenbogen, et al.Applied Physics Letters
PaperMasked, anisotropic thermal etching and regrowth for in situ patterning of compound semiconductorsAlan C. Warren, J. Woodall, et al.Applied Physics Letters
