PaperArsenic precipitates and the semi-insulating properties of GaAs buffer layers grown by low-temperature molecular beam epitaxyAlan C. Warren, J. Woodall, et al.Applied Physics Letters
PaperSubpicosecond, freely propagating electromagnetic pulse generation and detection using GaAs:As epilayersAlan C. Warren, N. Katzenellenbogen, et al.Applied Physics Letters
PaperGaAs buffer layers grown at low substrate temperatures using As2 and the formation of arsenic precipitatesM.R. Melloch, K. Mahalingam, et al.Journal of Crystal Growth
Conference paperSELF-CONSISTENT CALCULATION OF ELECTRON STATES IN NARROW CHANNELS.S.E. Laux, Alan C. WarrenIEDM 1985
