Low temperature SER and noise in a high speed DRAM
W.H. Henkels, N.C.-C. Lu, et al.
Workshop on Low Temperature Semiconductor Electronics 1989
A detailed optimized design of a 1 K-bit memory cell array with drivers and reset gates has been carried out based upon a set of projections for achievable tolerances in linewidths, resistances, and Josephson critical currents in a 2.5-μm technology employing niobium edge junctions. The cell operating regions were significantly widened relative to a predecessor Pb-alloy design by adjusting gate and cell inductances, adjusting current levels, and by employing a different timing sequence for application of write controls. Much-improved control of array-line current oscillations, without loss of speed, was achieved by employing a distributed filtering scheme using distributed damping. The design employs trimming of currents to accommodate ±8% chip-to-chip differences in the average critical current. The cell size is 63×63 μm. Monte Carlo calculations of threshold curve tolerances and operating current sensitivities and tolerances lead to a design-limited yield of about 95% for 4 K bits.
W.H. Henkels, N.C.-C. Lu, et al.
Workshop on Low Temperature Semiconductor Electronics 1989
W.H. Henkels, W. Hwang, et al.
VLSI Circuits 1997
J. Kadlec
IEEE Transactions on Magnetics
S. Dhong, W.H. Henkels, et al.
VLSI Circuits 1989