Douglass S. Kalika, David W. Giles, et al.
Journal of Rheology
The fabrication of integrated complementary metal-oxide-semiconductor devices and circuits that scale into the sub-100nm regime is presented. While the devices are essentially conventional in design, significant innovations have been required to build them. These innovations combine new materials, lithography, etching, and processing technologies. Moreover, theoretical models of novel devices, such as the double gate transistor, suggest that metal-oxide-semiconductor field-effect transistors may be scaled down to gate lengths of 30nm.
Douglass S. Kalika, David W. Giles, et al.
Journal of Rheology
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997
Surendra B. Anantharaman, Joachim Kohlbrecher, et al.
MRS Fall Meeting 2020