Conference paper
SiGe-on-insulator symmetric lateral bipolar transistors
Jeng-Bang Yau, Jin Cai, et al.
S3S 2015
A simple method for determining both the emitter and the base series resistances of bipolar transistors from the measured I-V characteristics is described. The method is based on the observation that deviation of the base current from the ideal exp (qVBE/kT) behavior at high currents can be attributed solely and relatively simply to series resistances. Series resistances determined by this method are given for sample high-speed digital bipolar transistors. © 1984 IEEE
Jeng-Bang Yau, Jin Cai, et al.
S3S 2015
Jin Cai, Amlan Majumdar, et al.
IEDM 2007
Tianbing Chen, Marco Bellini, et al.
BCTM 2005
Arvind Kumar, Massimo V. Fischetti, et al.
Journal of Applied Physics