W.D. Hinsberg, F.A. Houle, et al.
IBM J. Res. Dev
By analysis of the response of a high-contrast photoresist to sinusoidal illumination, generated interferometrically, one can extract a phenomenological modulation transfer function of the resist material, thereby characterizing its spatial resolution. Deep-ultraviolet interferometric lithography allows the resist response to be quantified at length scales below 100 nm. As an example, the resolution (FWHM) of the commercial resist UVII-HS is found to be approximately 50 nm. This simple method can be applied to materials under development for advanced photolithography with short-wavelength illumination. © 2002 Optical Society of America.
W.D. Hinsberg, F.A. Houle, et al.
IBM J. Res. Dev
J. Hoffnagle
Optics Letters
S.-W. Lee, W.D. Hinsberg, et al.
Analytical Chemistry
F.A. Houle, G.M. Poliskie, et al.
Microlithography 2000