Conference paperPhysical and electrical properties of scaled gate stacks on Si/passivated In0.53Ga0.47AsChiara Marchiori, Mario El Kazzi, et al.ECS Transactions
Conference paperIII/V layer growth on Si and Ge surfaces for direct wafer bonding as a path for hybrid CMOSEmanuele Uccelli, Nicolas Daix, et al.ITNG 2014
Conference paperAn integration path for gate-first UTB III-V-on-insulator MOSFETs with silicon, using direct wafer bonding and donor wafer recyclingLukas Czornomaz, N. Daix, et al.IEDM 2012
PaperHigh-performance InGaAs FinFETs with raised source/drain extensionsClarissa Convertino, C. B. Zota, et al.Japanese Journal of Applied Physics
