Santanu Basu, Paul May, et al.
ASSL 1989
This paper presents waveform measurements at the internal nodes of a 0.5-μm CMOS SRAM, performed at room temperature and at low temperature (80 K). These measurements yield detailed information on the internal operation of the circuit, and, more precisely, on the delays whose sum constitutes the access time in this highspeed memory circuit. The waveforms are measured in a noncontact, nonintrusive fashion with a newly developed ultrafast electron beam prober, the Picosecond Photoelectron Scanning Electron Microscope (PPSEM). © 1988 IEEE.
Santanu Basu, Paul May, et al.
ASSL 1989
G. Arjavalingam, Yvon Pastol, et al.
IEEE T-MTT
George Chiu, Jean-Marc Halbout, et al.
Microlithography 1987
George Chiu, Jean-Marc Halbout, et al.
Microelectronic Engineering