Yvon Pastol, Jean-Marc Halbout, et al.
IEEE Electron Device Letters
The performance of devices and circuits is advancing at a rapid pace with the advent of submicron design ground rules and sub-50 ps switching times. The requirements to probe the internal nodes of these ultrafast, ultrasmall, and ultradense circuits give rise to great challenges for high-speed electron-beam testing. In this paper, we review the steps which have allowed electron beam testing to achieve simultaneously: 5 ps temporal resolution, 0·1 μm spot size and 3 mV/ (formula presented)Hz voltage sensitivity. The resulting newly developed instrument, called the picosecond photoelectron scanning electron microscope (PPSEM), is capable of measuring the state-of-the-art bipolar and FET circuits, as shown in this paper. © 1988 Taylor & Francis Group, LLC.
Yvon Pastol, Jean-Marc Halbout, et al.
IEEE Electron Device Letters
Santanu Basu, Paul May, et al.
ASSL 1989
George Chiu, Modest M. Oprysko
SPIE Advances in Intelligent Robotics Systems 1990
George Chiu, Jean-Marc Halbout, et al.
Microlithography 1987