OFF-state modulation of SOI floating-body

OFF-state modulation of the floating-body potential in partially depleted silicon-on-insulator (PDSOI) transistors from the 90-nm technology generation is observed using pulsed current-voltage (I-V) measurements. Varying the off-value of the gate voltage is shown to either decrease the transient on-current (Ion,trans) of PDSOI devices through gate-to-body leakage or increase Ion,trans due to gate-induced drain leakage. Dependence of Ion,trans on OFF-state gate bias is not observed in bulk devices, PDSOI devices with body contacts, or fully depleted SOI devices, confirming the role of floating-body in the observed effects. Thus, OFF-state conditions should be accounted for when considering floating-body effects and when using pulsed I-V measurements to study self-heating. © 2006 IEEE.