Meng-Hsueh Chiang, Jeng-Nan Lin, et al.
IEEE Transactions on Electron Devices
In this letter, the random dopant fluctuation effect in ultrathin-body (UTB) fully depleted/silicon-on-insulator (FD/SOI) devices is analyzed. We show that due to larger variability and asymmetry in threshold voltage Vt distribution, it will be difficult to use UTB FD/ SOI devices for sub-50-nm static random access memory (SRAM) design. Using thinner buried oxide (BOX) FD/SOI devices, the asymmetry in the Vt spread can be reduced. We present a viable concept of FD/ SOI SRAM and predict that a thin-BOX device is the optimal FD/SOI structure for SRAM in sub-50-nm technology nodes. © 2006 IEEE.
Meng-Hsueh Chiang, Jeng-Nan Lin, et al.
IEEE Transactions on Electron Devices
Meng-Hsueh Chiang, Keunwoo Kim, et al.
IEEE International SOI Conference 2004
Saibal Mukhopadhyay, Rahul M. Rao, et al.
IEEE Transactions on VLSI Systems
Rajiv V. Joshi, Richard Q. Williams, et al.
ESSDERC/ESSCIRC 2004