Compression for data archiving and backup revisited
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
We have demonstrated that the optimum Ta-Si-N compositions for use as oxygen diffusion barriers in stacked-capacitor dynamic random-access memory structures with perovskite dielectrics are in the range Ta(20-25 at.%)-Si(20-45 at.%)-N(35-60 at.%). Twenty-two different Ta-Si-N compositions were evaluated, starting from six sputter-deposited Ta-Si alloys of which four were reactively deposited in 2-8% nitrogen in an argon plasma. The barriers were evaluated after an aggressive 650 °C/30 min oxygen anneal to determine if they remained electrically conductive, prevented oxygen diffusion and formation of low dielectric constant oxides, and had minimal interaction with the Pt electrode and underlying Si plug. Rutherford backscattering spectroscopy, four-point probe sheet resistance, through-film-resistance, and x-ray diffraction analysis techniques were used in the evaluation. © 2000 Materials Research Society.
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
K.A. Chao
Physical Review B
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001