M. Hargrove, S.W. Crowder, et al.
IEDM 1998
Synchrotron based O 1s and N 1s photoabsorption spectroscopy have been used to determine the composition and thickness of oxynitride films grown in N2O on a Si(100) surface. Core-level photoabsorption spectroscopy is shown to be a very sensitive probe capable of measuring surface coverages lower than 0.1 monolayers of N (6.5×1013 N atoms/cm2). Film composition was monitored as a function of growth to demonstrate the stoichiometry reversal from primarily N terminated surfaces in thin films to nearly pure SiO2 in films thicker than ∼ 20 Å. A sample with a 60 Å oxynitride film was depth-profiled by etching in HF and was shown, via N 1s absorption spectroscopy, to have N segregation within 10 Å above the Si/SiO2 interface.
M. Hargrove, S.W. Crowder, et al.
IEDM 1998
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983