Publications

This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.

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15 results for J. Karasinski

Hall Mobility in Hafnium Oxide Based MOSFETs: Charge Effects
- - L.Å. Ragnarsson
  - N.A. Bojarczuk
  - et al.
- 2003
- IEEE Electron Device Letters
Electrical characterization of Al₂O₃ n-channel MOSFETs with aluminum gates
- - L.Å. Ragnarsson
  - S. Guha
  - et al.
- 2001
- IEEE Electron Device Letters
LPCVD TUNGSTEN SILICIDE WITH TITANIUM UNDERLAYER.
- - R.V. Joshi
  - L. Krusin-Elbaum
  - et al.
- 1985
- VLSI Technology 1985
Correlation of Structure and Magnetic Properties of Thin CoP Films
- - J. Mahlke
  - N.C. Anderson
  - et al.
- 2019
- JES
Ultrathin Al₂O₃ and HfO₂ gate dielectrics on surface-nitrided Ge
- - James Jer-Hueih Chen
  - Nestor A. Bojarczuk Jr.
  - et al.
- 2004
- IEEE Transactions on Electron Devices
Physical and electrical properties of reactive molecular-beam-deposited aluminum nitride in metal-oxide-silicon structures
- - L.Å. Ragnarsson
  - N.A. Bojarczuk
  - et al.
- 2003
- Journal of Applied Physics
High-quality aluminum oxide gate dielectrics by ultra-high-vacuum reactive atomic-beam deposition
- - S. Guha
  - E. Cartier
  - et al.
- 2001
- Journal of Applied Physics
Molecular-beam-deposited yttrium-oxide dielectrics in aluminum-gated metal-oxide-semiconductor field-effect transistors: Effective electron mobility
- - L.Å. Ragnarsson
  - S. Guha
  - et al.
- 2001
- Applied Physics Letters
Thermal activation energies of Mg in GaN:Mg measured by the Hall effect and admittance spectroscopy
- - D.J. Kim
  - D.Y. Ryu
  - et al.
- 2000
- Journal of Applied Physics
Transplanted Si films on arbitrary substrates using GaN underlayers
- - Supratik Guha
  - Arunava Gupta
  - et al.
- 2000
- Applied Physics Letters